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| BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Features * single P-Channel in SuperSO8 * Qualified according JEDEC 1) for target applications * V GS=25 V, specially suited for notebook applications * Pb-free; RoHS compliant * ESD > 4 kV * applications: battery management, load switching * Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 3.0 -100 PG-TDSON-8 V m A Type Package Marking 030P3NS Lead free Yes Halogen free Yes Packing dry BSC030P03NS3 G PG-TDSON-8 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=70 C T A=25 C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P tot T C =25 C T A=25 C2) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 1) Value -100 -100 -25.4 -200 345 25 125 2.5 -55 ... 150 Unit A T C=25 C3) I D=-100 A, R GS=25 mJ V W T j, T stg JESD22-A114 HBM C class 3 (> 4KV) 260 C 55/150/56 J-STD20 and JESD22 Rev. 2.1 page 1 2009-11-16 BSC030P03NS3 G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area2) Values typ. max. Unit - - 1.0 50 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250A V GS(th) V DS=V GS, I D=-345 A V DS=-30 V, V GS=0 V, T j=25 C V DS=-30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-25 V, V DS=0 V V GS=-6 V, I D=-50 A -30 -3.1 -2.5 -1.9 V Zero gate voltage drain current I DSS - - -1 A - 3.0 -10 -100 4.6 nA m V GS=-10 V, I D=-50 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=-30 A 47 2.3 3.1 93 3.0 S 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See Fig. 3 Rev. 2.1 page 2 2009-11-16 BSC030P03NS3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=-50 A, T j=25 C V R=15 V, I F=|I S|, di F/dt =100 A/s 100 200 -1.1 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-15 V, I D=-50 A, V GS=0 to -10 V 42 17 19 44 140 4.1 108 56 22 28 62 186 144 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-15 V, V GS=10 V, I D=-50 A, R G=6 V GS=0 V, V DS=-15 V, f =1 MHz 10500 4690 350 27 105 98 33 14000 pF 6240 520 41 158 147 50 ns Values typ. max. Unit Reverse recovery time t rr - 65 90 ns Reverse recovery charge Q rr - 86 111 nC Rev. 2.1 page 3 2009-11-16 BSC030P03NS3 G 1 Power dissipation P tot=f(T C); t p10 s 2 Drain current I D=f(T C); |V GS|10 V; t p10 s 130 120 110 100 90 80 110 100 90 80 70 P tot [W] 60 50 40 30 20 10 0 0 40 80 120 160 -I D [A] 70 60 50 40 30 20 10 0 0 40 80 120 160 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C1); D =0 parameter: t p 1000 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 101 10 s 10 102 100 100 s 1 ms 100 1 Z thJS [K/W] 10-1 0.1 100 101 10 -I D [A] limited by on-state resistance 10 ms 0.5 DC 0.2 10 0 1 0.1 0.05 10-1 0.02 0.1 0.01 single pulse 10-2 0.01 0.1 1 10 10-2 2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 10 -1 10 0 -V DS [V] 10 1 10 10-5 10-4 10-3 t p [s] 10-2 10-1 100 101 Rev. 2.1 page 4 2009-11-16 BSC030P03NS3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 200 -10 V --5.0 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 6 175 -6.0V 150 4 -4.5V 125 -4.5 V 100 R DS(on) [m] -5.0 V -I D [A] -6.0 V -8.0 V -10 V 75 2 50 25 0 0 1 2 3 0 0 10 20 30 40 50 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. forward transconductance g fs=f(I D); T j=25 C 160 140 150 120 100 -I D [A] 100 g fs [S] 150 C 25 C 80 60 50 40 20 0 0 1 2 3 4 5 6 0 0 20 40 60 80 100 -V GS [V] -I D [A] Rev. 2.1 page 5 2009-11-16 BSC030P03NS3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-50 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-345 A 5 4 3.5 4 3 98 % max. R DS(on) [m] -V GS(th) [V] 3 2.5 typ. 2 min. typ. 2 1.5 1 1 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 1000 104 Ciss 100 25 C, typ Coss C [pF] 103 I F [A] 10 150 C, typ Crss 150 C, 98% 102 1 25 C, 98% 0.1 0 5 10 15 20 25 30 0 0.5 1 1.5 2 -V DS [V] -V SD [V] Rev. 2.1 page 6 2009-11-16 BSC030P03NS3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 10 2 14 Typ. gate charge V GS=f(Q gate); I D=-50 A pulsed parameter: V DD 10 9 25 C -15 V 8 -6 V -24 V 100 C 7 6 -I AV [A] 125 C -V GS [V] 101 5 4 3 2 1 0 100 100 0 10 1 20 40 60 80 100 120 140 t AV [s] 10 2 10 3 -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 A 16 Gate charge waveforms 36 V GS Qg 34 -V BR(DSS) [V] 32 30 V g s(th) 28 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 26 T j [C] Rev. 2.1 page 7 2009-11-16 BSC030P03NS3 G Package Outline PG-TDSON-8 Dimensions in mm Rev. 2.1 page 8 2009-11-16 BSC030P03NS3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 2009-11-16 |
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